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2003 Mar 25 3
NXP Semiconductors
Product data sheet
High-speed double diode PMBD6100
Note
1. Device mounted on an FR4 printed-circuit board.
IFRM
repetitive peak forward current
?
450
mA
IFSM
non-repetitive peak forward current
square wave; Tj
=
25
°C prior to
surge; see
Fig.4
t
=
1
μs
?
4
A
t
=
1
ms
?
1
A
t
=
1
s
?
0.5
A
Ptot
total power dissipation
Tamb
=
25
°C; note
1
?
250
mW
Tstg
storage temperature
?65
+150
°C
Tj
junction temperature
?
150
°C
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ELECTRICAL CHARACTERISTICS
Tj
=
25
°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VF
forward voltage
see
Fig.3
IF
=
1
mA
550
700
mV
IF
=
10
mA
?
855
mV
IF
=
50
mA
?
1
V
IF
=
100
mA
0.85
1.1
V
IR
reverse current
see
Fig.5
VR
=
50
V
?
100
nA
VR
=
50
V; Tj
=
150
°C
?
50
μA
Cd
diode capacitance
f
=
1
MHz; VR
=
0; see
Fig.6
?
1.5
pF
trr
reverse recovery time
when switched from IF
=
10
mA to
IR
=
10
mA; RL
=
100
?; measured
at IR
=
1
mA; see
Fig.7
?
4
ns
Vfr
forward recovery voltage
when switched from IF
=
10
mA;
tr
=
20
ns; see
Fig.8
?
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth
j-tp
thermal resistance from junction to tie-point
360
K/W
Rth
j-a
thermal resistance from
junction to ambient
note
1
500
K/W
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